Deposition
Electron beam evaporation system
The Temescal FC-2000 e-beam evaporator is a fast- cycle, load-locked electron beam evaporation system that allows the source to remain under vacuum during substrate reloading. There are six source pockets in the chamber which allows for multiple layer coating without breaking vacuum.
Currently the available evaporation materials are: Al, Ni, Cr, Ag, Au, Ti, Cu, NiO, TiO2, MoO3, Al2O3 and ITO.
Examples of use:
Device metallisation, metal interconnection, solar cells.
Purpose:
To coat a uniform metal layer and dielectrics film.
Material systems:
Inorganic compounds and metals.
Scale/volume:
Up to 13 pieces of 4 inch wafer.
Specifications/resolution:
Deposition rate 1 – 2 Å/s, up to 300 degrees Celsius substrate heater with 2 reactive gases, 6 crucible pockets.
E-gun power: 10 KV
Model:
Temescal FC-2000 E-Beam Evaporator
Site:
The University of Queensland
Location:
Class 10 000 cleanroom, Level 2E, AIBN (Bldg #75), St Lucia
Instrument Contact:
Oxidation furnace
The HiTech benchtop oxidation furnace is a very user-friendly system with an auto loading/unloading feature. It can be used for wet/dry oxidation and annealing process.
Examples of use:
Silicon dioxide growth.
Purpose:
Used to grow oxide layers on silicon wafers at temperature up to 1 100 degrees Celsius.
Material systems:
Silicon only.
Scale/volume:
Multi wafers to a maximum of 25.
Specifications/resolution:
Max temperature: 1 200 degrees C.
Model:
HiTech benchtop oxidation furnace
Site:
The University of Queensland
Location:
Class 10 000 cleanroom, Level 3, Pandanus (Bldg #1022), Long Pocket
Instrument Contact:
SiC deposition on Si wafers
At ANFF-Q, we would like to promote the use of SiC technology. ANFF-Q has two SiC deposition systems available within the Queensland Microtechnology Facility to supply SiC coatings on Si substrates.
The MkI system
A custom built reactor for up to 150 mm wafers
The EpiFlx reactor
Created in partnership with SPT Microtechnologies USA, a large production batch reactor for up to 300 mm wafers.
Various epitaxial deposition processes are available for 3C SiC deposition on Si <100> and <111> and also on epitaxially grown AlN. SiC can also be deposited on silicon oxide and silicon nitride films on Si wafers.
We actively seek to promote the use of the silicon carbide on silicon (SiC on Si). If you are interested in research collaboration or product development in SiC on Si applications, please contact the ANFF-Q Facility Manager.
For more detailed specifications and capabilities see information and pdf files at Queensland Microtechnology Facility.
Examples of use:
Because there is a large variety of 3C SiC with different attributes possible, we like to discuss the application needs of each client in order to select and qualify the deposition process to provide the best and most suitable material for each application.
Purpose:
- Provide a production ready process solution to exploit the superior properties of SiC for use in the next generation of devices:
- MEMs
- NEMs
- Optical
- Photonics
- Diaphragms
- Filters
- Bio sensors
- Si substrates targeting applications such as GaN substrate or HEMT and LED
- SiC on Si substrate for graphene
Material systems:
Standard Si wafers.
Scale/volume:
Small samples to large batch processes for up to 300 mm wafers.
Specifications/resolution:
Typically SiC film thicknesses available from 20 nm to 1 µm with thickness non uniformity <1 %, 1 mm edge exclusion.
SiC on Si with a sub nm rms surface roughness is available.
Site
Griffith University
Location:
QMF (Bldg N74), Nathan Campus
Instrument Contact:
Sputtering system
The AJA ATC 2200 sputtering system has two RF and two DC power generators which can cater for various material depositions. It is equipped with a vacuum load-lock which gives two major advantages of higher throughput and better film quality.
Argon, nitrogen and oxygen are available for use in reactive ion sputtering applications. The reactive gas chemically combines with the target material to form a different material on the substrate. The substrate holder can be heated up to 350 degrees Celsius for a higher sputtering rate and the system is also capable of applying RF-bias to do sample sputtering clean before deposition.
The substrate holder is designed for an 8 inch wafer, but it can also be adjusted to hold 4–6 inch wafers. The substrate holder can be rotated during deposition to improve film uniformity.
Examples of use:
Film coating for solar cells.
Purpose:
The plasma enhanced deposition technique is used to generate a variety of materials at the atomic scale. Novel materials and structures are formed in the presence of the reactive gases.
Material systems:
Inorganic target compounds, dielectric materials and metals.
Scale/volume:
Single wafer processing up to 8 inches.
Specifications/resolution:
Reactive gases: N2, O2, Ar; 4 Targets: 2 RF and 2 DC; a loadlock robotic system; plasma cleaning and a base vacuum of 10 – 8 Torr.
Model:
Site:
The University of Queensland
Location:
Class 10 000 cleanroom, Level 2E, AIBN (Bldg #75), St Lucia
