New for 2017 — achievement of sub nm roughness in epitaxial SiC morphology

In recent years, improvements in our epitaxial grown silicon carbide on silicon (SiC on Si) films at ANFF-Q have evolved using our EpiFlx large batch production reactor, jointly developed with SPT Microtechnologies USA Inc. We have now achieved sub nm roughness in epitaxial SiC morphology.

Many applications require epitaxial SiC on Si with a sub nm rms surface roughness. These include applications for SiC photonics and wave guides, some MEMs, graphene on Si, wafer bonding, and use in LED and HEMT devices where subsequent nitride growth for AlN or GaN is required.

For further information about SiC on Si research and wafer supply, please contact Operations Director Alan Iacopi.