ANFF-Q clients are improving electrical contacts for high power devices using silicon carbide

Specific contact resistance, ρc, versus anneal temperature for Cr/Ni/Au and Ni/Cr/Au contacts to n-type 3C-SiC

The wide band-gap semiconductor silicon carbide (SiC) has shown attractive properties in devices operating at high temperature and high power. Researchers from RMIT, La Trobe and Griffith Universities are working with ANFF-Q to develop metal/semiconductor contacts with lower contact resistance that withstand higher power levels and use less energy.

In particular, the team have systematically examined—for the first time—the role of Cr in both the Au/Ni/Cr and Au/Cr/Ni 3-layer ohmic contact systems to n-type 3C-SiC as a function of annealing temperature. The team identified the effect of the 3-layered metal contact structure in controlling contact resistance of the metal to SiC interface. In n-SiC/Ni/Cr/Au contacts, the properties improved with higher anneal temperatures. The results of this close collaborative project have been published in Microelectronic Engineering. For more details on the project, take a look at the case study.